Al浓度对AZO薄膜结构和光电性能的影响

Influence of Al concentration on the structural,optical and electrical properties of AZO thin films

采用射频溅射方法在Si基片上制备出AZO掺杂薄膜,对薄膜进行了XRD和AFM分析,并对其电性能作了研究。结果表明,掺杂量低于15%(原子分数)时,AZO薄膜结构为纤锌矿结构,呈c轴方向择优生长,没有Al2O3相出现。薄膜的可见光透过率均在80%以上,其最高电阻率出现在掺杂量为30%(原子分数),为1.3×107Ω.cm。

ZnO ： Al （AZO） thin films were grown by RF sputtering. Their microstructures and morphologies were studied with X-ray diffraction spectroscopy （XRD） and AFM. The resistance of AZO thin films was measured with a four-point probe method. The results show that they have a polycrystalline hexagonal wurtzite structure with a high preferred orientation along the （002） plane when the Al concentration below 15at%. Their optical transmittance are over 80 %. The AZO films has a maximum resistivity of 1.3×10^7Ω·cm.