摘要
使用二氯化镉(CdCl2.2.5H2O)、硫粉(S)、硒粉(Se)为原料,用乙二胺作溶剂,在180℃的温和条件下,通过改变原料中硫、硒的组分,合成了固溶体半导体CdS1-xSex(0≤x≤1)纳米材料,用XRD、TEM、SAED进行分析表征,产物为六方相、直径约20nm左右、长度约500nm左右的短棒状结构.依据XRD图,对产物的晶格常数随组分x的变化关系进行了研究,其变化关系遵从Vegard定律;测量了产物的紫外吸收光谱,对其能带隙随组分x的变化关系进行了研究,说明可通过对组分x的控制来调制材料的带隙.
Semiconductor CdS1-xSex nanocrystals were synthesized using CdCl2· 2.5H2O, S powder and Se powder as starting materials and ethylenediamine as solvent. The experiment was conducted via the solvothermal reaction at 180℃ for 12h and the composition of products was changed by changing the amounts of S powder and Se powder. The products were characterized with XRD, TEM, SAED. The results showed that the products were hexaganol phase with the average diameter of 20 nm and the length of 500nm. The paper also discussed the relationship of lattice constants and bandgap energies of the products vs. selenium fraction x by XRD and UV-Vis spectrophotometer, respectively.
出处
《安徽师范大学学报（自然科学版）》
CAS
2007年第2期151-154,191,共5页
Journal of Anhui Normal University(Natural Science)
关键词
半导体
纳米材料
晶格常数
紫外-可见吸收光谱
溶剂热法
带隙
semiconductor
： nanomaterials
lattice constants
UV- Vis absorption spectrum
solvothermal method
bandgap
