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Si掺杂放电等离子合成Ti_2AlC/Ti_3AlC_2材料及理论分析 被引量:11

Synthesis of Ti_2AlC/Ti_3AlC_2 with Si doping by spark plasma sintering and theoretical analysis
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摘要 以Ti粉、Al粉、活性炭和Si粉为原料,采用放电等离子工艺分别以摩尔比为2.0Ti/1.1Al/1.0C、2.0Ti/1.0Al/0.1Si/1.0C、2.0Ti/1.0Al/0.2Si/1.0C、2.0Ti/0.9Al/0.2Si/1.0C和2.0Ti/1.0Al/0.3Si/1.0C,在1 200℃合成了Ti2AlC/Ti3AlC2块体材料。通过合成试样的X射线衍射谱,确定了放电等离子合成试样的物相组成,并用扫描电镜结合能谱仪观察了合成试样的显微结构和微区成分。结果表明:以2.0Ti/1.1Al/1.0C为原料放电等离子合成了层状结构明显的Ti2AlC材料;掺Si后所有试样都由Ti2AlC、Ti3AlC2和Ti3SiC2 3种物相组成;当掺Si量逐渐增大,即Al与Si的量比减小时,试样中Ti3AlC2和Ti3SiC2的含量增加,而Ti2AlC的含量降低,同时颗粒得到细化。应用量子化学计算结果解释了掺Si后不利于Ti2AlC的生成,而有利于Ti3AlC2的生成机理,说明了掺Si后固溶体的产生过程。 Ti2A1C/Ti3A1C2 bulk material was synthesized by spark plasma sintering (SPS) at 1 200℃using elemental powder mixture of Ti, A1, active carbon and Si whose molar ratios were 2.0Ti/1.1A1/1.0C, 2,0Ti/1.OA1/O,1Si/1.OC, 2.0Ti/1.OA1/0.2Si/1.OC, 2.0Ti/0.9A1/0.2Si/1.0C and 2.0Ti/1,OA1/O,3Si/1,OC. X-ray diffractometry was used to determine the phase composition, and scanning electron microscopy with energy-dispersive spectroscopy was observed to investigate the microstructure of samples and components in selected area respectively, The results show that Ti2A1C bulk material which has obvious layered structure can be synthesized by SPS from 2.0Ti/1.1A1/1.0C at 1 200 ~C, On the other hand, the samples Si doping are made of Ti2A1C, Ti3A1C2 and Ti3SiC2. When the amount of Si doping increases and molar ratio of A1 to Si decreases, the amount of Ti3A1C2 and Ti3SiC2 increases while Ti2A1C decreases. At the same time, the size of layered crystal grain becomes refined. The mechanism that Si doping is not helpful to form Ti2A1C is explained according to the results of quantum chemistry calculation. The formation of Si solid solution after Si doping is illuminated.
出处 《中国有色金属学报》 EI CAS CSCD 北大核心 2007年第4期511-517,共7页 The Chinese Journal of Nonferrous Metals
基金 国家自然科学基金资助项目(50572080)
关键词 硅掺杂 放电等离子烧结 Ti2A1C/Ti3A1C2 理论分析 Si doping spark plasma sintering Ti2A1C/Ti3A1C2 theoretical analysis
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参考文献16

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