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功率型GaN基LED静电保护方法研究 被引量:3

Analysis of ESD Protection for High Power GaN-based Light-emitting Diodes
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摘要 介绍了几种常用的GaN基大功率白光发光二极管(LED)静电保护的方法,分析了GaN基大功率白光LED静电损伤的机理,并在此基础上,提出了改善GaN基大功率白光LED的抗静电损伤的途径与方法。 GaN-based light-emitting diodes are sensitive to electrostatic discharge (ESD). Several methods of ESD protection are introduced and the mechanism of ESD damage is analyzed. With this understanding, it summarizes the effective and simple methods of ESD protection for high power GaN-based light-emitting diodes.
出处 《半导体光电》 EI CAS CSCD 北大核心 2007年第4期474-477,共4页 Semiconductor Optoelectronics
关键词 氮化镓 发光二极管 静电保护 齐纳二极管 GaN light-emitting diode electrostatic discharge Zener diode
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参考文献8

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