摘要
介绍了几种常用的GaN基大功率白光发光二极管(LED)静电保护的方法,分析了GaN基大功率白光LED静电损伤的机理,并在此基础上,提出了改善GaN基大功率白光LED的抗静电损伤的途径与方法。
GaN-based light-emitting diodes are sensitive to electrostatic discharge (ESD). Several methods of ESD protection are introduced and the mechanism of ESD damage is analyzed. With this understanding, it summarizes the effective and simple methods of ESD protection for high power GaN-based light-emitting diodes.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2007年第4期474-477,共4页
Semiconductor Optoelectronics
关键词
氮化镓
发光二极管
静电保护
齐纳二极管
GaN
light-emitting diode
electrostatic discharge
Zener diode