SiC晶须在高压静电场作用下单向排列的研究

Study of One-Diectional Arrangement of SiC Whiskers under High Voltage Electrostatic Field

研究了在高压静电场作用下，经过预处理的SiC晶须在含有适量非离子表面活性剂的氟里昂（R－113）中单向排列的工艺，探讨了SiC晶须单向排列可能的机理。结果表明，在高压静电场的作用下，SiC晶须首先极化并且在电场力的作用下朝着静电场方向定向排列。

This paper deals with the one-directional arrangement technique and the possible mehanism of bretreated SiC whiskers in nonion surface-active agent Feron-113 under the high voltage electrostatic field. Results have showed that under the high voltage electrostatic field, the SiC whiskers first are polarized and then are arranged towards the direction of the electrical field