磁控溅射制备AZO/Ag/AZO透明导电膜的性能研究

Performance study of AZO/Ag/AZO transparent conductive multilayer prepared films by R. F magnetron sputtering

选择ZnO2与Al2O3质量比为97:3的靶材为溅射源,用射频磁控溅射法室温下在玻璃基底上沉积AZO/Ag/AZO薄膜,讨论了氧流量变化对薄膜透光率、方阻及表面形貌的影响并深入分析了机理。研究结果表明,氧流量变化会导致薄膜沉积厚度的变化,氧流量为4时薄膜沉积速率最快。沉积AZO时充入氧气会使整个膜系的透光率不随Ag层增厚明显降低,并且会使膜系的方阻降低。在最优氧流量为4L/min(标准状态下,下同)上下各沉积59nm的AZO与氧流量为0时沉积33nm银层相匹配的复合膜在可见光区(包括基底)的透光率达到90%,方阻为2.5Ω/ □。

Metal based on transparent conductive multilayer films, AZO/Ag/AZO thin films, is prepared on glass substrate at room temperature by means of radio frequency magnetic sputtering using a ceramic target whose mass ratio of ZnO2 to Al2O3 is 97：3. The influences of O2 flow rate on transmittance, sheet resistance and surface appearance were discussed and the reasons were studied in detail. The results show that the thicknesses of thin films are influenced by O2 flow rate, and the deposition rate is fastest when O2 flow rate is 4 L/min. The transmittances of thin films are not reduced with thickness increase of Ag films, when O2 is introduced to AZO thin films deposition, and the resistances are reduced. The transmittance of multilayer films, which consist of AZO films of 59nm thickness on both side respectively under O2 flow rate 4 L/min and Ag film of 33nm thickness under O2 flow rate 0 L/min, is about 90% in visible light range, and square resistivity is about 2.5Ω/□.