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Organic Light-Emitting Diodes by Doping Liq into an Electron Transport Layer 被引量：1

具有新型电子传输层的有机薄膜电致发光器件(英文)
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摘要 Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone. 将8-hydroxy-quinolinato lithium(Liq)掺入4’7-diphyenyl-1,10-phenanthroline(BPhen)作为n型电子传输层(ETL),将tet-rafluro-tetracyano-quinodimethane(F4-TCNQ)掺入4,4′,4″-tris(3-methylphenylphenylamono)triphenylamine(m-MTDATA)作为p型空穴传输层(HTL),制作了p-i-n结构有机电致发光器件.为了检验传输层传导率的改善情况,制备了一系列单一空穴器件和单一电子器件.在引入BPhen:33wt%Liq作为ETL后,x%F4-TCNQ:m-MTDATA作为HTL后,器件的电流和功率效率明显改善.与控制器件(未掺杂)相比,性能最佳的掺杂器件的电流及功率效率分别提高了51%和89%,电压下降了29%.这是由于传输层传导能力的提高使得载流子在发光区域达到有效平衡.
作者 徐维 鲁富翰 蒋雪茵 张志林 朱文清 徐贵
机构地区 上海大学材料学院 内蒙古包头市供电局
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期33-38,共6页 半导体学报（英文版）
基金 国家自然科学基金(批准号:90201034,60477014,60577041) 国家重点基础研究发展计划(批准号:2002CB613400)资助项目~~
关键词 P-I-N N-DOPING current efficiency electron transport CONDUCTIVITY p-i-n n型掺杂 电流效率 电子传输 传导率
分类号 TN383.1 [电子电信—物理电子学]
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参考文献27

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同被引文献12

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引证文献1

Journal of Semiconductors
2008年 第1期

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