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Molecular Dynamics Simulation of Thermal Conductivity in Si-Ge Nanocomposites

Molecular Dynamics Simulation of Thermal Conductivity in Si-Ge Nanocomposites
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摘要 Thermal conductivity of nanocomposites is calculated by molecular dynamics (MD) simulation. The effect of size on thermal conductivity of nanowire composites and the temperature profiles are studied. The results indicate that the thermal conductivity of nanowire composites could be much lower than alloy value; the thermal conductivity is slightly dependent on temperature except at very low temperature. Thermal conductivity of nanocomposites is calculated by molecular dynamics (MD) simulation. The effect of size on thermal conductivity of nanowire composites and the temperature profiles are studied. The results indicate that the thermal conductivity of nanowire composites could be much lower than alloy value; the thermal conductivity is slightly dependent on temperature except at very low temperature.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2008年第8期2973-2976,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 50576099, and the National High-Tech Research and Development Programme of China under Grant No 2006AA05Z203.
关键词 THERMOELECTRIC-MATERIALS COMPUTER-SIMULATION SILICON DEVICES THERMOELECTRIC-MATERIALS COMPUTER-SIMULATION SILICON DEVICES
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