电弧离子镀与中频磁控溅射复合制备TiAlN薄膜

TiAlN Films Deposited by Arc Ion Plating Compounded with Intermediate Frequency Unbalanced Magnetron Sputtering

采用Ti靶电弧离子镀与Al靶中频磁控溅射相结合的复合工艺,分别在单晶硅抛光面和高速钢抛光面两种基体上成功地制备了TiAlN薄膜样品。电子扫描电镜(SEM)、能谱和X射线衍射(XRD)分析结果表明:此复合工艺下制备的TiAlN薄膜比TiN薄膜表面液滴尺寸更小,针状孔洞基本消除,组织更为致密均匀。TiAlN薄膜的含Al量为0.86%(原子百分比)左右,Ti与N的含量比(原子百分比)大致为1:1,Al原子的加入使TiN结晶结构发生畸变,晶格常数变小。TiAlN薄膜的硬度比TiN薄膜的硬度,提高30%左右。

The TiAlN films were deposited on polished surface of Si（100） wafer and high speed steel separately by arc ion plating compounded with intermediate frequency unbalanced magnetron sputtering. The properties of TiAlN films and TiN films deposited by arc ion plating were also tested and compared. The analysis results of SEM, EDS and XRD indicate： the size of droplets on the surface of TiAlN is smaller than that on the TiN films, the defects are eliminated on a large scale, and the microstructure of the surface is more compact and well mixed. The content of Al element in TiAlN films is around 0.86 %（atm）, and the atoms ratio of element Ti to N is about 1：1. The lattice distortion of TiN films is caused by the addition of Al element, and the lattice-constant of the TiN crystal structure is decreased. The hardness of TiAlN films is increased by nearly 30%, compared with the TiN films.