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Electrochemical behaviors of silicon wafers in silica slurry 被引量:1

Electrochemical behaviors of silicon wafers in silica slurry
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摘要 The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) sttrface was lower than that of(111), whereas the current density of (100) was much higher than that of(111). The electrochemical behaviors of n-type silicon wafers pH value and solid content of the slurry on the corrosion of silicon in silica-based slurry were investigated, and the influences of the wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) sttrface was lower than that of(111), whereas the current density of (100) was much higher than that of(111).
出处 《Journal of University of Science and Technology Beijing》 CSCD 2008年第4期495-499,共5页 北京科技大学学报(英文版)
基金 This study was financially supported by the National Natural Science Foundation of China (No.59925412) the Natural Science Foundation of Hunan Province of China (No.03JJY3015).
关键词 silicon wafers electrochemical behavior IMPEDANCE CORROSION polarization curves silicon wafers electrochemical behavior impedance corrosion polarization curves
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  • 1T. Du,D. Tamboli,V. Desai,V. S. Chathapuram,K. B. Sundaram.Chemical mechanical polishing of tantalum: oxidizer and pH effects[J].Journal of Materials Science: Materials in Electronics.2004(2)
  • 2Tianbao Du,Jiajian Chen,Dianzhen Cao.N,N-Dipropynoxy methyl amine trimethyl phosphonate as corrosion inhibitor for iron in sulfuric acid[J].Journal of Materials Science.2001(16)
  • 3B.L. Gehman.In the age of 300 mm silicon, tech stan- dards are even more crucial[].Solid State Technology.2001
  • 4J.F. Luo,and D. Dornfeld.A material removal mechanism in chemical mechanical polishing: theory and modelling[].IEEE Trans Semicond Manuf.2001
  • 5S. Sivaram,H. Bath,R. Leggett,A. Maury,K. Monning,and R. Tolles.Planarizing interlevel dielectrics by chemi- cal-mechanical polishing[].Solid State Technology.1992
  • 6E.D. Palik,V.M. Bermudez,and O.J. Glembocki.Ellip- sometry study of orientation-dependent etching of silicon in aqueous KOH[].Journal of the Electrochemical Society.1985
  • 7H. Seidel,L. Csepregi,A. Heuberger,and H. Baumgartel.Anisotropic etching of crystalline silicon in alkaline solu- tions: I. Orientation dependence and behaviour of passiva- tion layer[].Journal of the Electrochemical Society.1990
  • 8T. Du,D. Tamboli,V. Desai,V.S. Chathapuram,and K.B. Sundaram.Chemical mechanical polishing of tantalum: oxidizer and pH effects[].J Master Sci Mater Electron.2004
  • 9D.A. Jones.Principles and Prevention of Corrosion[]..1983
  • 10X.G. Zhang.Electrochemistry of Silicon and Its Oxide[]..2001

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