摘要
报道了320×256元AlxGa1-xN日盲型紫外探测器及其焦平面阵列探测器的研制情况，介绍了材料生长、器件制备工艺和器件的光电特性。器件的开启电压大于3．5V，-0．5V偏压时暗电流小于1．2×10^-12A（φ=300ttm台面），光谱响应范围260～280nm，268nm峰值波长的响应度大于0．095A／W。器件实现了日盲紫外成像演示。
Developments of 320 × 256 solar-blind photodetectors and focal plane arrays based on AlxGa1-xN material are reported. The details in AlxGa1-xN material growth and device fabrication processes are described. Current-voltage relationship of the diode exhibits that the turn-on voltage is greater than 3.5 V,and the dark current is as low as 1.2×10^-12 A at --0.5 V （φ=300μm mesa）. Spectral response of the diode reveals a peak responses of 0.095 A/W at 268 nm. The imaging experiment made with solar blind UV light source was demonstrated successfully.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第1期21-24,共4页
Semiconductor Optoelectronics
