铜铟镓硒柔性薄膜太阳电池的制备及性能表征

Preparation and property of CuIn_(1-x)Ga_xSe_2thin film solar cells on flexible substrates

以厚度为25～70mm的钛箔为衬底,直流磁控溅射法制备0.8～1.2mm的底电极Mo薄膜,而后以CuIn和CuGa靶交替溅射制得Cu-In-Ga金属预制膜,再以真空硒化法制得CuIn1-xGaxSe2薄膜。以化学浴沉积法制备缓冲层CdS,射频磁控溅射法制备ZnO和ZAO,直流磁控溅射法制备上电极,制得结构为衬底Ti/Mo/CIGS/CdS/ZnO/ZAO/Al,其光电转换效率达到7.3%(25℃,AM0)。

CuIn1-xGaxSe2 thin film solar cells were preparatived on 27-70 μm thick Ti foils flexible substrates. A 0.8-1.2 μm molybdenum（Mo） layer was deposited by DC magnetron sputtering, which served as the back contact. The CIGS absorbing layers were grown by the two-step method. Cu-In-Ga metallic precursors were deposited using Cu-Ga and Cu-In alloy targets by DC magnetron sputtering. The metallic precursor films were selenized in vacuum evaporation system. Intrinsic-ZnO and Al-doped ZnO were deposited by ratio-frequency （RF） sputtering on CBD CdS devices, and the AI top contact was deposited by DC magnetron sputtering. The efficiency of CIGS-based solar cells with the structure of Ti/Mo/CIG S/CdS/ZnO/ZAO/Al is about 7.3% （test condition： AM0, 25 ℃）.