摘要
An electro-absorption(EA)modulator is one of key components for optical fiber communications due to the high speed,small size,low voltage and integration ability with other semiconductor devices.A 40 Gb/s InGaAsP/InP multiplequantum-well(MQW)EA modulator monolithically integrated with a semiconductor optical amplifier(SOA)was fabricated for digital communications.The modulator capacitance was reduced to obtain 40 GHz bandwidth,and the SOA section helped reduce the insertion loss from 18 dB to 3 dB.InGaAlAs/InP MQW EA modulators have also been fabricated and characterized for analog optical fiber communications.A low driving voltage of 2.7 V and high spurious free dynamic range of 107 dB·Hz2/3 were estimated by static and dynamic measurements.
An electro-absorption （EA） modulator is one of key components for optical fiber communications due to the high speed, small size, low voltage and integration ability with other semiconductor devices. A 40 Gb/s InGaAsP/InP multiple-quantum-well （MQW） EA modulator monolithically integrated with a semiconductor optical amplifier （SOA） was fabricated for digital communications. The modulator capacitance was reduced to obtain 40 GHz bandwidth, and the SOA section helped reduce the insertion loss from 18 dB to 3 dB. InGaAlAs/InP MQW EA modulators have also been fabricated and characterized for analog optical fiber communications. A low driving voltage of 2.7 V and high spurious free dynamic range of 107 dB·Hz^2/3 were estimated by static and dynamic measurements.
基金
supported by National ScienceFoundation Programs(60536020,60723002)
"973"State Key Basic Research Programs(2006CB302800,2006CB921106)
