摘要
文章介绍了变温霍尔效应测量半导体电学特性实验,通过77~400K的浅掺杂n型锗标准样品变温霍尔效应测量,根据对各种变温数据曲线中高温本征导电区斜率的计算,得到半导体样品的禁带宽度Eg,并对计算结果进行比较讨论。认为lg(|RH|T3/2)-1/T曲线方法更合适用来计算禁带宽度。
This paper describes the variable-temperature Hall effect measurement of electrical properties of semiconductor. As an example, a shallow doped n-type Ge standard sample was measured in a range of77K -4001C By means of calculating the intrinsic conduction zone temperature slope for various variable-temperature data curves, one can obtain the bandgap Eg of semiconductor. The analysis from the data curves depending on temperature indicates that the bandgap calculated from lg( | RH | T^3/2 ) - 1/T curve is more suitable for calculating the bandgap.
出处
《实验科学与技术》
2010年第2期15-17,共3页
Experiment Science and Technology
基金
国家自然科学基金项目资助[10575039]
关键词
变温霍尔效应
n型标准锗样品
禁带宽度
temperature-dependent hall effect
n-type Ge standard sample
bandgap