摘要
Flash存储器是在20世纪80年代末逐渐发展起来的一种新型半导体非挥发性存储器,它具有结构简单、高密度、低成本、高可靠性和系统的电可擦除性等优点,是当今半导体存储器市场中发展最为迅速的一种存储器。文章对Flash存储器的发展现状及发展趋势进行了介绍,分析了Flash存储器的工作机理;并针对Flash存储器是一种数据正确性非理想的器件,在使用中可能会有坏损单元,探讨了Flash存储器冗余技术的种类和实现方法。
Flash memory is in the 20th century, late 80＇s gradually developed a new type of semiconductor non- volatile memory, it has a simple structure, high-density, low cost, high reliability and system of electrically erasable nature of the advantages of today＇s semiconductor. This paper introduces the development of Flash memory status and development trends of Flash memory, and analyzes the working mechanism of the Flash memory. And for Flash memory is a data of non-ideal device may be corrupted in use unit, discusses the types of Flash memory redundancy and realization method.
出处
《电子与封装》
2010年第5期30-32,共3页
Electronics & Packaging
