SRAM激光微束单粒子效应实验研究

Laser Microbeam Experiment on Single Event Effect in SRAM

结合器件版图,通过对2 k SRAM存储单元和外围电路进行单粒子效应激光微束辐照,获得SRAM器件的单粒子翻转敏感区域,测定了不同敏感区域单粒子翻转的激光能量阈值和等效LET阈值,并对SRAM器件的单粒子闭锁敏感度进行测试。结果表明,存储单元中截止N管漏区、截止P管漏区、对应门控管漏区是单粒子翻转的敏感区域;实验中没有测到该器件发生单粒子闭锁现象,表明采用外延工艺以及源漏接触、版图布局调整等设计对器件抗单粒子闭锁加固是十分有效的。

Combined with device layout,laser microbeam irradiation of single event effect（SEU） in 2k SRAM memory cell and external circuit was carried out.SEU sensitive regions in SRAM were obtained.Laser energy threshold and equivalent LET threshold of different sensitive regions were determined.Single event latchup susceptibility in SRAM was also measured.Experiment results showed that SEU sensitive regions were at drain regions of the n-channel transistor in off-state,p-channel transistor in off-state and corresponding gate-controlled transistor.No single event latchup was observed in the expeiment,which indicated that epitaxy,source drain contact and adjustment of layout placement used for the device were effective for single event latchup hardening.