不同偏置条件下NPN双极晶体管的电离辐照效应

Radiation Response of NPN Bipolar Transistors at Various Emitter Junction Biases

对NPN双极晶体管进行了不同剂量率、不同偏置条件下的电离辐射实验。研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小。NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次。对出现这一实验结果的机理进行了探讨。

At various dose rates, ionizing radiation response of NPN bipolar transistors at three kinds of base-emitter junction biases was investigated. The results show that the radiation damages are most significant at base-emitter junction reverse bias and mini- mal at f6rward bias when irradiated at high or low dose rate. Furthermore, the radiation damage is more severe at low dose rate for the same bias, i.e. enhanced low dose rate sensitivity （ELDRS）. The influence of base-emitter junction bias on ELDRS effect is obvious. The ELDRS effect is most significant for base-emitter junction forward bias,while it is least for reverse bias. The mechanisms of these results were discussed.