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Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering 被引量:1

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering
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摘要 High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC. High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
作者 赵江 赵修建
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2011年第3期388-392,共5页 武汉理工大学学报(材料科学英文版)
基金 Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
关键词 radio-frequency (RF) magnetron sputtering transparent conducting film zinc doped tin oxide (ZTO) substrate temperature radio-frequency (RF) magnetron sputtering transparent conducting film zinc doped tin oxide (ZTO) substrate temperature
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