摘要
选用了三种型号的PNP输入双极运算放大器,在正偏和零偏状态下进行了辐照实验,由此对高剂量率辐照后高温退火加速评估方法进行了探索。结果表明,辐照后高温退火的实验结果乘以一定的倍数因子,便可较好地模拟PNP输入双极运算放大器的低剂量率辐照损伤,根据曲线的变化规律可以较快地鉴别器件是否存在低剂量率辐射损伤增强效应。
Three types of PNP bipolar operational amplifiers were irradiated under forward bias and zero bias, and high temperature annealing accelerated evaluation methods were investigated. The results show that multiplying a certain factor to the results from high temperature annealing of the irradiated devices, the effect of enhanced low dose radiation sensitivity （ELDRS） can he better simulated, and occurrence of the ELDRS can be judged from the curves.
出处
《核技术》
CAS
CSCD
北大核心
2011年第11期810-814,共5页
Nuclear Techniques
