硬盘基板化学机械粗抛光的实验研究

Experimental Study of Chemical Mechanical Rough Polishing for Hard Disk Substrate

针对硬盘NiP/Al基板粗抛光,采用SiO2作为抛光磨料的碱性抛光液,在不同压力、转速、pH值、磨料浓度和活性剂体积浓度下,对硬盘基板粗抛光的去除速率和表面粗糙度的变化规律进行研究,用原子力显微镜观察抛光表面的微观形貌。最后对5个关键参数进行了优化。结果表明:当压力为0.10 MPa,转速为80 rad/min,pH值为11.2,磨料与去离子水体积比为1∶0.5,表面活性剂体积浓度为9 mL/L时,硬盘基板的去除速率为27 mg/min,粗抛后表面粗糙度为0.281 nm,获得了高的去除速率和较好的表面粗糙度,这样会大大降低精抛的时间,有利于抛光效率的提高。

For rough polishing of NiP/AI substrate of hard disk, SiO2 colloid was adopted to polish the substrate of hard disk under different pressures, speed, pH values, abrasive concentration and activator concentration, the removal rate of hard disk substrate was measured and the surface analyses after chemical mechanical rough polishing were accomplished by atomic force microscope （AFM）. Finally, five key polishing parameters were optimized. The results show that when the pressure is 0. 10 MPa, the speed is 80 rad/min, the pH value is 11.2, the ratio of abrasive volume with the deionized water is 1：0.5, and surfactant concentration is 9 mL/L, the removal rate of hard disk substrate is 27 mg/min, the surface roughness after polishing is 0. 281 nm. After rough polishing of hard disk substrate, high removal rate and good surface roughness are obtained, and it will greatly reduce the time of fine polishing, which is beneficial to increase the polishing efficiency.