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Influence of methane on hot filament CVD diamond films deposited on high-speed steel substrates with WC-Co interlayer 被引量:1

Influence of methane on hot filament CVD diamond films deposited on high-speed steel substrates with WC-Co interlayer
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摘要 Diamond films were deposited on high-speed steel substrates by hot filament chemical vapor deposition (HFCVD) method. To minimize the early formation of graphite and to enhance the diamond film adhesion, a WC-Co coating was used as an interlayer on the steel substrates by high velocity oxy-fuel spraying. The effects of methane content on nucleation, quality, residual stress and adhesion of diamond films were investigated. The results indicate that the increasing methane content leads to the increase in nucleation density, residual stress, the degradation of quality and adhesion of diamond films. Diamond films deposited on high-speed steel (HSS) substrate with a WC-Co interlayer exhibit high nucleation density and good adhesion under the condition of the methane content initially set to be a higher value (4%, volume fraction) for 30 min, and then reduced to 2% for subsequent growth at pressure of 3 kPa and substrate temperature of 800 ℃. Diamond films were deposited on high-speed steel substrates by hot filament chemical vapor deposition (HFCVD) method. To minimize the early formation of graphite and to enhance the diamond film adhesion, a WC-Co coating was used as an interlayer on the steel substrates by high velocity oxy-fuel spraying. The effects of methane content on nucleation, quality, residual stress and adhesion of diamond films were investigated. The results indicate that the increasing methane content leads to the increase in nucleation density, residual stress, the degradation of quality and adhesion of diamond films. Diamond films deposited on high-speed steel (HSS) substrate with a WC-Co interlayer exhibit high nucleation density and good adhesion under the condition of the methane content initially set to be a higher value (4%, volume fraction) for 30 min, and then reduced to 2% for subsequent growth at pressure of 3 kPa and substrate temperature of 800 °C.
出处 《Journal of Central South University》 SCIE EI CAS 2011年第6期1819-1824,共6页 中南大学学报(英文版)
基金 Project(1343-74236000005) supported by the Innovation Foundation for Postgraduates of Hunan Province, China Project(ZKJ2008001) supported by the Open Fund for Valuable Instruments of Central South University, China Project(2008112048) supported by the Open Fund of State Key Laboratory of Metallurgy, China
关键词 diamond film WC-Co interlayer METHANE nucleation density ADHESION CVD金刚石薄膜 热丝化学气相沉积 甲烷含量 钢基板 WC Co 中间层 残余应力
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