摘要
采用化学溶液沉积法,在(100)取向单晶硅衬底上制备铁掺杂镍酸镧(LaNi1-xFexO3,LNFeO-x)薄膜,研究了其结构和室温下的导电特性。X射线衍射测试结果表明,经700℃1 h退火的薄膜呈钙钛矿结构,没有可以观察到的杂相生成。薄膜表面平整、致密,没有微裂痕出现。随着铁含量的增加,薄膜电阻率由1.7 mΩ.cm增加到3.9 mΩ.cm。
La1-xFexNiO3（LNFeO-x）thin films were prepared on（100） Si substrates by a chemical solution deposition method（CSD）.Their structure and room temperature resitivity were analyzed.X-ray diffraction show that the thin films annealed at 700 ℃ for 1 h were grown in perovskite structure and no secondary phase was detected.The thin films were smooth,density and crack-free.The room temperature resistivity increases from 1.7 Ω·cm to 3.9 Ω·cm as x increases from 0 to 0.15.
出处
《中山大学学报（自然科学版）》
CAS
CSCD
北大核心
2012年第3期60-62,共3页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
广东省高校优秀青年创新人才培育资助项目(LYM10036)
关键词
LaNi1-xFexO3
LNFeO-x
化学溶液沉积法
CSD
La1-xFexNiO3（LNFeO-x）thin films were prepared on（100） Si substrates by a chemical solution deposition method（CSD）.Their structure and room temperature resitivity were analyzed.X-ray diffraction show that the thin films annealed at 700 ℃ for 1 h were grown in perovskite structure and no secondary phase was detected.The thin films were smooth,density and crack-free.The room temperature resistivity increases from 1.7 Ω·cm to 3.9 Ω·cm as x increases from 0 to 0.15.
