摘要
Five novel oligothiophene derivatives end-capped by different functional groups （R=ethoxyl （EtOP3T）, me- thylsulfanyl （MSP3T）, acetyl （AcP3T）, methylsulfonyl （MSO2P3T） and biphenyl （BP3T） groups） were synthe- sized. They were characterized by nuclear magnetic resonance （IH NMR）, mass spectrometry （MS） and Fourier transform Infra-red spectra （IR）. The relationship between end-capping functional groups and optoelectronic prop- erties of them was investigated. It was found that the compound with sulfonyl group in the molecular structure （MSOeP3T） shows the highest oxidation stability （also supported by theoretical calculations） and best thermal sta- bility among the five compounds. The results of scanning electron microscope （SEM） interpret that MSOzP3T dis- plays excellent ability of self-film forming. This reveals that it could be a potential candidate for thin film material. The liquid crystal property of MSO2P3T was characterized by polarized optical microscopy analysis （POM） and X-ray diffraction （XRD）. The results of this paper provide useful information for the design of tailored oligothio- phene derivatives for devices.
Five novel oligothiophene derivatives end-capped by different functional groups （R=ethoxyl （EtOP3T）, me- thylsulfanyl （MSP3T）, acetyl （AcP3T）, methylsulfonyl （MSO2P3T） and biphenyl （BP3T） groups） were synthe- sized. They were characterized by nuclear magnetic resonance （IH NMR）, mass spectrometry （MS） and Fourier transform Infra-red spectra （IR）. The relationship between end-capping functional groups and optoelectronic prop- erties of them was investigated. It was found that the compound with sulfonyl group in the molecular structure （MSOeP3T） shows the highest oxidation stability （also supported by theoretical calculations） and best thermal sta- bility among the five compounds. The results of scanning electron microscope （SEM） interpret that MSOzP3T dis- plays excellent ability of self-film forming. This reveals that it could be a potential candidate for thin film material. The liquid crystal property of MSO2P3T was characterized by polarized optical microscopy analysis （POM） and X-ray diffraction （XRD）. The results of this paper provide useful information for the design of tailored oligothio- phene derivatives for devices.
