微波功率FET小信号等效电路参数提取方法

Extraction Methods of Small-Signal Equivalent Circuit Parameters for Microwave Power FET's

文章针对S参数提取微波功率FET小信号等效电路参数方法 ,着重论述二种改进的算法 ,并应用于我所研制的微波功率2100μm栅宽的GaAsMESFET管芯的小信号等效电路13只元件参数计算,计算得出的S参数值与实验数据相吻合 ,提高了计算速度和精度。文章还对非本征元件参数初值的选取、本征元件的优化顺序。

Two improved methods of extracting small-signal equivalent circuit parameters are dominantly described from S—parameters of power microwave GaAs MESFET in this paper, and also applied for 2100μm gate-width power microwave GaAs MESFET fabricated by us. We extracted the 13 parameters of small-signal equivalent circuit for power microwave GaAs MESFET . The agreement is good between the calculated S—parameters and the measurement ones. Comparing with theliterature.we have realized faster calculating speed and more accurate results.Also we discuss the problems such as the choice of the initial values of extrinsic parameters, optimization sequence of intrinsic parameters, decrease of search space and the number of independent variables etc..