摘要
非极性GaN材料解决了传统GaN材料中的极化现象,具有较好的应用前景。用金属有机物化学气相沉积方法,在r面蓝宝石上生长了Mg注入非极性a面GaN薄膜,并选取650℃、750℃、850℃这3个温度对Mg注入GaN薄膜进行退火温度研究。用原子力显微镜、光致发光谱、拉曼谱研究了材料的表面形貌、光学性质以及面内应力。结果表明,在750℃退火时效果较好。
The nonpolar GaN materials solve the polarization of conventional GaN materials, and thus have a good prospect of application. Mg-dopoed nonpolar a-plane GaN film is grown on r-plane sapphire by metal organic chemical vapor deposition method, and three temperatures of 650 ℃, 750 ℃ and 850 ℃ are selected to study the annealing temperature of Mg-doped nonpolar GaN films. With an atomic force microscope （ AFM ） , photolumines- cence spectroscopy （PL） and Raman spectra （Raman） , the surface morphology of the material, optical properties, and surface stress are studied. Best results are obtained when annealed at 750 ℃.
出处
《电子科技》
2013年第1期12-15,共4页
Electronic Science and Technology
