摘要
光弹效应光电子器件是一种适合光电子集成的新颖平面型器件结构。InGaAsP/InP双异质结外延片在直流负偏压120V作用下,利用射频溅射和光刻刻剥离技术在样品表面沉积110nm厚的W0.95Ni0.05金属薄膜应变条。在W0.95-Ni0.05金属薄膜应变条下的半导体内形成了对InGaAsP/InP双异质结构侧向光具有良好限制作用的光弹波导结构。W0.95Ni0.05金属薄膜及由其形成的光弹波导器件在氢氮混合气体(85%N2,15%H2)的保护下,分别在250℃,350℃,450℃,600℃温度下各退火0.5h以后,W0.95Ni0.05金属薄膜中压应变减少了原来的1/10左右。退火前后光弹波导输出的近场光模没有发生很大的变化。这些实验结果充分证明了由W0.95Ni0.05金属薄膜在InGaAsP/InP双异质结构内形成的光弹波导结构具有很高的热稳定性。
Photoelastic optoelectronic device is a novel planar device which is suitable for optoelectronic integrations. Deposition of 110μ m thick W0.95Ni0.05 metal thin film stripe on InGaAsP/InP heterostructure wafer is carried out using both of rf sputtering with the substrate under a negative dc bias of 120V and a photoresist lift- off technique. The photoelastic waveguides, which achieve the good lateral confinement of light in InGaAsP/InP heterostructures, are formed in semiconductor beneath a stripe of W0.95Ni0.05 thin film. The compression strain reduces about 10% in the metal thin film, and has a little changes for near- field optical mode after annealing at 250℃ , 350℃ , 450℃ , and 600℃ for 30 min in 85% N2 and 15% H2 mixed gas. These experimental results have well confirmed the highly thermal stability of photoelastic waveguide structures formed by W0.95Ni0.05 metal thin film in InGaAsP/InP heterostructures.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第3期266-269,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金资助项目!(69976003)
关键词
平面型波导器件
INGAASP/INP
高温退火
WNi/Semiconductor contact
Photoelastic effect
Planar waveguide devices
Ther- mal stability