氧化铝复合磨粒对硬盘NiP/Al基板CMP的研究

Research on the CMP of NiP/Al basic substrate with Al_2O_3 composite abrasive

在Al2O3表面改性的基础上,制备了以氧化铝、水、双氧水、氢氧化钠溶液为主要成分的抛光液,研究了计算机NiP/Al硬盘盘基片的化学机械抛光(chemical mechanical polishing,简称CMP)特性.通过螺旋测微仪测量了NiP/Al硬盘盘基片表面在不同抛光压力、抛光盘转速、时间、pH值下的材料去除率,利用原子力显微镜AFM表征了抛光后的硬盘盘基片表面粗糙度及形貌,并分析研究了Al2O3抛光液的CMP机理.最终得到最佳抛光工艺参数:抛光盘速率为30r/min、抛光压力2.1kPa、抛光时间为60min、抛光液pH值为9,此时表面粗糙度Ra为4.67nm.

On the basis of A1203 surface modification, the polishing slurry was prepared with aluminum oxide, hydrogen peroxide, water and sodium hydroxide as the main components, and the CMP proper ties of NiP/A1 basic substrate were studied. Under the conditions of different polishing pressures, pads speeds, time and pH values, the material removal rate was measured by micrometer. The surface rough ness and morphology of hard disk substrate polished were characterized by AFM, and the CMP mecha nism of A12 Oa polishing slurry was analyzed. The best polishing process parameters obtained are as fol lows： Pads rate of 30r/min, polishing pressure of 2.1 kPa, polishing time of 60 min, polishing slurry pH value of 9, and Ra of 4.67 nm at the moment.