摘要
将半经典自洽场激光理论扩展至非均匀泵浦,并对一维不均匀泵浦发光半导体的第一域值进行理论推导和计算.计算结果显示,第一激光域值D(1)th与泵浦区域x0成反比,在半导体外强度为常数,即光通量守恒.
A semi-classical self-consistent integral theory was extended to inhomogeneous pumping area and the lowest pumping thresholds were calculated for the inhomogeneous one-dimensional edge- emitting semiconductor. The calculated results showed that the lowest pumping was inversely proportional to pumping region :Co and lasing intensity was constant outside semiconductor, namely light flux conserves.
出处
《湖北大学学报(自然科学版)》
CAS
2014年第1期53-55,67,共4页
Journal of Hubei University:Natural Science
基金
国家自然科学基金(60778003
10876010)资助
关键词
自洽场积分方程
常通量(CF)态
旋转波
缓慢包络近似
self-consistent integral equation
constant flux(CF) states
the rotating wave
slowly-varying envelope approximations