摘要
This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
