宽带低噪声放大器单片微波集成电路

Broadband Low Noise Amplifier MMIC

从行波放大器设计理论出发，研制了一款基于低噪声GaAs赝配高电子迁移率晶体管（PHEMT）工艺设计的2～20GHz单片微波集成电路（MMIC）宽带低噪声放大器。该款放大器由九级电路构成。为了进一步提高放大器的增益，采用了一个共源场效应管和一个共栅场效应管级联的拓扑结构，每级放大器采用自偏压技术实现单电源供电。测试结果表明，本款低噪声放大器在外加＋5V工作电压下，能够在2～20GHz频率内实现小信号增益大于16dB，增益平坦度小于士0．5dB，输出P-1dB大于14dBm，噪声系数典型值为2．5dB，输入和输出回波损耗均小于-15dB，工作电流仅为63mA，低噪声放大器芯片面积为3．1mm×1．3mm。

According to the design theory of the traveling wave amplifier, a broadband low noise amplifier （LNA） monolithic microwave integrated circuit （MMIC） with the frequency from 2 GHz to 20 GHz was designed and fabricated based on GaAs pseudomorphic high electron mobility transistor （PHEMT） process. This amplifier was formed by nine amplification stages. In order to further improve the broadband gain of the amplifier, the cascaded triodes （CASCODE） configuration was applied by combining a common-source field effect transistor （FET） and a common-gate FET, the self-biased tech- nique in each stage was used to achieve a single power supply. In the frequency band of 2-20 GHz, the test results with ＋5 V supply show that the gain is greater than 16 dB, the gain flatness is lower than ＋0.5 dB, output power is greater than 14 dBm at ldB compression point, the typical value of the noise figure is 2.5 dB, the input return loss and the output return loss are less than -15 dB and the operation current is only 63 mA, the LNA chip size is 3.1 mm ×1.3 mm.