基于CMOS SOI工艺的射频开关设计

RF Switch Design Based on CMOS SOI Technology

采用0.18μm CMOS SOI工艺技术研制加工的单刀双掷射频开关,集成了开关电路、驱动器和静电保护电路。在DC^6GHz频带内,测得插入损耗0.7dB@2GHz、1dB@4GHz、1.5dB@6GHz,隔离度37dB@2GHz、31dB@4GHz、27dB@6GHz,在5GHz以内端口输入输出驻波比≤1.5:1,输入功率1dB压缩点达到33dBm,IP3达到42dBm。可应用于移动通信系统。

A single-pole double-through（SPDT） RF switch has been designed and fabricated using 0.18 μm CMOS SOI technology. It integrates switch circuits, drivers and ESD protect circuits. The measurement results are as follows： in the frequency range of DC-6 GHz, insertion loss≤0.7 dB@2 GHz, 41 dB@4 GHz,≤1. 5 dB@6 GHz; isolation≥37 dB@2 GHz, ≥31 dB@ 4 GHz, ≥27 dB@6 GHz, input and output VSWS≤1. 5.1 within 5 GHz, input 1 dB compression point P-1db≥33 dBm, IP3≥42 dBm. This switch is applicable for mobile communication system.