摘要
使用插值拟合近似获得晶格常数、带隙随压力的解析表示 ,采用变分法研究了流体静力学压力对半导体 Ga As电子本征表面态的影响 .数值结果表明 ,随压力增加电子表面态能级明显向上移动 。
With a viriational treatment, the surface states of electrons in semiconductor GaAs have been studied as a function of hydrostatic pressure taking into account an interpolation fit approximation between the lattice constant, band gap and the pressure effect.The numerical results show that the electrons tend to close the surface and their surface states are heightened obviously with increasing pressure.
出处
《内蒙古大学学报(自然科学版)》
CAS
CSCD
北大核心
2001年第6期621-624,共4页
Journal of Inner Mongolia University:Natural Science Edition
基金
内蒙古自然科学基金资助项目
"3 2 1"人才工程
国家回国人员科研资助项目