用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

A Low-Loss Interlayer--Thick Layers of Porous Silicon and Oxidized Porous Silicon for Application to the Microwave/RF-IC

提出在单片微波集成电路 (MMIC)中用多孔硅 /氧化多孔硅厚膜作微波无源器件的低损耗介质膜 .研究了厚度为 70μm的多孔硅 /氧化多孔硅厚膜在低阻硅衬底上的形成 ,这层厚膜增加了衬底的电阻率 ,减少了微波的有效介质损耗 .通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性 ,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线 (CPW)

The use of a thick layer of porous silicon (PS)/oxidized porous silicon(OPS) is proposed as a low loss interlayer for passive elements in the monolithic microwave integrated circuit.The formation of the PS/OPS thick layers about 70μm on low resistivity Si is studied,which is expected to increase the substrate resistivity and reduce its effective dielectric loss under the microwave operation.A significant improved microwave performance on low R Si substrates is demonstrated by measuring the microwave characteristics of coplanar waveguides fabricated on the Si substrates with thick OPS.