摘要
The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
设计与制作了大功率 80 8nm Al Ga As/ Ga As宽波导激光二极管 .器件的 Al0 .3 5Ga0 .65As波导厚度提高到0 .9μm,宽波导会引起高阶模的激射 .为了抑制高阶模 ,Al0 .55Ga0 .45As限制层厚度降低到 0 .7μm ,同时确保基横模的辐射损耗在 0 .2 cm- 1 以下 .采用 MOCVD进行材料生长 ,得到了高性能的器件 ,10 0 μm条形激光二极管的最大输出达 10 .2 W.
