摘要
Polarization-stable 980 nm oxide-confined vertical-cavity surface-emitting lasers with 3 μm diamond-shaped aper- ture are fabricated by comprehensively utilizing the anisotropic properties of wet etching and wet nitrogen oxida- tion of Ⅲ-Ⅴ semiconductor materials. Polarization-stable operation along the major axis of the diamond-shaped oxide aperture with 11 dB orthogonal polarization suppression ratio is achieved in a temperature range of 15-55℃ from the threshold to 4 mA.
Polarization-stable 980 nm oxide-confined vertical-cavity surface-emitting lasers with 3 μm diamond-shaped aper- ture are fabricated by comprehensively utilizing the anisotropic properties of wet etching and wet nitrogen oxida- tion of Ⅲ-Ⅴ semiconductor materials. Polarization-stable operation along the major axis of the diamond-shaped oxide aperture with 11 dB orthogonal polarization suppression ratio is achieved in a temperature range of 15-55℃ from the threshold to 4 mA.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61222501 and 61335004
the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20111103110019
