改变沉积温度在玻璃衬底上沉积制备ZnO基透明导电薄膜的研究

Study on the ZnO-based Transparent Conductive Film Deposition on the Glass Substrate under Various Deposition Temperatures

针对透明导电材料领域里在廉价的普通玻璃衬底上沉积制备Zn O光电透明导电薄膜的问题,采用了新的制备方法,将玻璃基片清洗送入气相沉积反应室,向反应室内同时通入携带有Zn(CH2CH3)2的氩气和氧气,制备高透射率的Zn O透明导电薄膜。制备结束后在400℃高温高温环境下退火,形成性能优异的Zn O光电透明导电薄膜。该方法制备工艺简单,沉积过程易于控制,所制备的透明导电薄膜均匀性好,光电性能优异,可用于制造太阳能电池、发光二极管、LCD以及手机等光电器件的透明电极。

In this paper, a new method was presented that was used to the deposition of ZnO transparent conductive thin film photovoltaic on cheap ordinary glass substrate in the field of transparent conductive materials. The method is to carry the cleaned glass substrate with the argon and oxygen accompanied with Zn（ CH2CH3 ）2 into the vapor deposition reaction chamber to deposit the ZnO transparent conductive thin films. After the as-grown films preparation, the 400 ℃ high temperature annealing is adopt to enhance the performance of high transparent conductive. The preparation process is simple and easy to control. The as-gown＇ films with the uniformity surface and excellent optical performance can be used for the manufacture of solar cells,light emitting diodes, and transparency electrodes of LCD and mobile phones.