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Experimental study of temperature dependence of single-event upset in SRAMs 被引量：2

Experimental study of temperature dependence of single-event upset in SRAMs
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摘要 We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-lm CMOS process,utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve(such as the chlorine ion incident). SEU cross section increases 257 %when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature. We report on the temperature dependence of single-event upsets in the 215-353 K range in a 4M com- mercial SRAM manufactured in a 0.15-tam CMOS process, utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve （such as the chlorine ion incident）. SEU cross section increases 257 % when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.
作者 Li Cai Gang Guo Jian-Cheng Liu Hui Fan Shu-Ting Shi Hui Wang Gui-Liang Wang Dong-Jun Shen Ning Hui An-Lin He
机构地区 China Institute of Atomic Energy
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2016年第1期93-97,共5页 核技术（英文）
基金 the National Natural Science Foundation of China(No.11405275)
关键词 温度依赖性 单粒子翻转 SRAM 实验 截面曲线 薄膜晶体管 工艺制造 CMOS Cryogenic Elevated temperature Heavy ion Single-event effects Single-event upset
分类号 TP333 [自动化与计算机技术—计算机系统结构]
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参考文献17

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Nuclear Science and Techniques
2016年 第1期

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