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Multicolor Photoluminescence in ITQ-16 Zeolite Film

Multicolor Photoluminescence in ITQ-16 Zeolite Film
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摘要 Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photolumines- cence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results in- dicate that Si--OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540--800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2*), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively. Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photolumines- cence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results in- dicate that Si--OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540--800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2*), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively.
出处 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2016年第5期713-718,共6页 高等学校化学研究(英文版)
基金 Supported by the Postdoctoral Science Foundation of China(No.2013M541716), the Postdoctoral Science Foundation of Jiangsu Province, China(No.1301055C) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars Sponsored by the Ministry of Education of China(No.K510900314).
关键词 Zeolite beta FILM ITQ-16 DEFECT PHOTOLUMINESCENCE Zeolite beta Film ITQ-16 Defect Photoluminescence
分类号 O [理学]
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