摘要
Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
作者
Xiang Li
De-Gang Zhao
De-Sheng Jiang
Jing Yang
Ping Chen
Zong-Shun Liu
Jian-Jun Zhu
Wei Liu
Xiao-Guang He
Xiao-Jing Li
Feng Liang
Jian-Ping Liu
Li-Qun Zhang
Hui Yang
Yuan-Tao Zhang
Guo-Tong Du
Heng Long
Mo Li
李翔;赵德刚;江德生;杨静;陈平;刘宗顺;朱建军;刘炜;何晓光;李晓静;梁锋;刘建平;张立群;杨辉;张源涛;杜国同;龙衡;李沫(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China University of Chinese Academy of Sciences, Beijing 100049, China Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China)
基金
supported by the National Key Research and Development Program of China(Grant No.2016YFB0401801)
the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089)
Science Challenge Project,China(Grant No.JCKY2016212A503)
One Hundred Person Project of the Chinese Academy of Sciences
