基于180nm COMS工艺的低功耗温度传感器电路设计

Low Power Temperature Sensor Circuit Design Based on COMS 180 nm Process

为降低温度传感器的功耗,提出一种结构简单的片上温度-频率转换器电路。该转换器能够根据与绝对温度成比例PTAT(Proportional To Absolute Temperature)的电流检测出温度,利用源极耦合多谐振荡器电路,将温度等效PTAT电流转换成频率。提出的电路采用标准180 nm CMOS技术设计,面积约为0.061 mm^2。通过多次实际测量,结果显示:当电源电压为0.8 V±10%时,该温度传感器能够在-43℃^+85℃的温度范围内良好工作,并且经过单点校正之后,最大温度误差小于±1℃。当电源电压为0.8 V时,+85℃条件下的平均功率损耗仅为500 n W。

In order to reduce the power consumption of the temperature sensor,a simple on-chip temperature-fre-quency converter circuit is proposed. The converter can detect temperature in terms of the proportional to absolutetemperature（PTAT）current,and then converts the temperature equivalent to the frequency by using the source cou-pled multi-vibrator circuit. The proposed circuit has been designed and fabricated in a standard 180 nm CMOS tech-nology and occupies area of about 0.061 mm^2. Through many practical measurement. The test results show that whenthe power supply voltage is 0.8 V＋10%,the temperature sensor can work within the temperature range of-43 ℃~＋85 ℃,and after a single point after correction,the maximum temperature error is less than ±1 ℃.When the powersupply voltage is 0.8 V,the average power loss at ＋85 ℃ is only 500 nW.