摘要
The present paper analyzes the hold and read stability with temperature and aspect ratio variations. To reduce the power dissipation, one of the effective techniques is the supply voltage reduction. At this reduced supply voltage the data must be stable. So, the minimum voltage should be discovered which can also retain the data. This voltage is the data retention voltage（DRV）. The DRV for 6T SRAM cell is estimated and analyzed in this paper.The sensitivity analysis is performed for the DRV variation with the variation in the temperature and aspect ratio of the pull up and pull down transistors. Cadence Virtuoso is used for DRV analysis using 45 nm GPDK technology files. After this, the read stability analysis of 6T SRAM cell in terms of SRRV（supply read retention voltage） and WRRV（wordline read retention voltage） is carried out. Read stability in terms of RSNM can be discovered by accessing the internal storage nodes. But in the case of dense SRAM arrays instead of using internal storage nodes,the stability can be discovered by using direct bit line measurements with the help of SRRV and WRRV. SRRV is used to find the minimum supply voltage for which data can be retained during a read operation. Similarly, WRRV is used to find the boosted value of wordline voltage, for which data can be retained during read operation. The SRRV and WRRV values are then analyzed for different Cell Ratios. The results of SRRV and WRRV are then compared with the reported data for the validation of the accuracy of the results.
The present paper analyzes the hold and read stability with temperature and aspect ratio variations. To reduce the power dissipation, one of the effective techniques is the supply voltage reduction. At this reduced supply voltage the data must be stable. So, the minimum voltage should be discovered which can also retain the data. This voltage is the data retention voltage（DRV）. The DRV for 6T SRAM cell is estimated and analyzed in this paper.The sensitivity analysis is performed for the DRV variation with the variation in the temperature and aspect ratio of the pull up and pull down transistors. Cadence Virtuoso is used for DRV analysis using 45 nm GPDK technology files. After this, the read stability analysis of 6T SRAM cell in terms of SRRV（supply read retention voltage） and WRRV（wordline read retention voltage） is carried out. Read stability in terms of RSNM can be discovered by accessing the internal storage nodes. But in the case of dense SRAM arrays instead of using internal storage nodes,the stability can be discovered by using direct bit line measurements with the help of SRRV and WRRV. SRRV is used to find the minimum supply voltage for which data can be retained during a read operation. Similarly, WRRV is used to find the boosted value of wordline voltage, for which data can be retained during read operation. The SRRV and WRRV values are then analyzed for different Cell Ratios. The results of SRRV and WRRV are then compared with the reported data for the validation of the accuracy of the results.
