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张应变和N型掺杂对锗能带结构的调节

Adjusting Ge band structure through tensile strain and N-type doping
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摘要 基于体锗的能带结构,从理论上计算分析了张应变和N型掺杂对锗能带结构的调节。张应变使价带和导带的能级分裂、偏移,N型掺杂使费米能级偏移,从而将锗调节为准直接带隙材料。当单独引入0.018的张应变时,锗变为准直接带隙,直接带隙为0.53 e V。当单独掺杂N型杂质9.5×1019cm-3时,锗的费米能级到达Γ带底。引入适量的张应变和N型掺杂浓度,既有利于锗能带结构的调节,又有利于材料的实际制备。研究结果为锗发光器件的设计和制作提供借鉴。 Based on the band structure of bulk Ge, the adjustment of Ge band structure through tensile strain and N-type doping was theoretically calculated and analyzed. Valance bands and conduction bands were splitted and shifted due to the tensile strain. While, the Fermi energy level was moved by N-type doping. These adjust Ge into a pseudo direct band gap material. By introducing a tensile strain of 0.018 alone, the Ge band structure was changed to be direct with a direct band gap of 0.53 eV. With doping a N-type dopant concentration of 9.5 X 1019cm-3 alone, Fermi energy level was shifted to the bottom of F band. It is beneficial to adjusting the Ge band structure and fabrication of these materials practically by introducing proper tensile strain and N-type doping. The results provide reference to the design and fabrication of Ge-based light emitting devices.
出处 《深圳信息职业技术学院学报》 2017年第3期59-63,共5页 Journal of Shenzhen Institute of Information Technology
基金 广东省高等学校优秀青年教师项目(Yq2014123)
关键词 张应变 N型掺杂 能带 发光器件 Ge tensile strain N-type doping band structure light emitting device
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  • 1Krishnamoorthy A V,Ho R,Zheng X,Schwetman H,Lexau J,Koka P,Li G,Shubin I,Cunningham J E 2009 Proc.IEEE 97 1337.
  • 2Arakawa Y,Nakamura T,Urino Y,Fujita T 2013 IEEE Commun.Mag.51 72.
  • 3Soref R 2006 IEEE J.Sel.Top.Quant.12 1678.
  • 4Masini G,Colace L,Assanto G 2002 Mater.Sci.Eng.B 89 2.
  • 5Lim A E,Song J,Fang Q,Li C,Tu X,Duan N C K,Tern R P,Liow T 2014 IEEE J.Sel.Top.Quant.20 1.
  • 6Mashanovich G Z,Milo?evi? M M,Nedeljkovic M,Owens N,Xiong B,Teo E J,Hu Y 2011 Opt.Express 19 7112.
  • 7Vlasov Y,Mcnab S 2004 Opt.Express 12 1622.
  • 8Lee K K,Lim D R,Kimerling L C,Shin J,Cerrina F 2001 Opt.Lett.26 1888.
  • 9Pathak S,Yu H,van Thourhout D,Bogaerts W 2014 11th IEEE International Conference on Group IV Photonics IEEE Paris,France,August 27-29,2014 p237.
  • 10Yao J,Sun Z,Zhong L,Natelson D,Tour J M 2010 Nano Lett.10 4105.

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