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Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature

Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature
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摘要 TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice. TiO_2 deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeO_x to reduce the tunneling resistance. Compared with TiO_2 deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO_2, which will dope TiO_2 contributing to the lower tunneling resistance. Al/TiO_2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO_2 achieves 2496 times of current density at-0.1 V compared with the device without the TiO_2 interface layer case, and is 8.85 times larger than that with 250°C deposited TiO_2. Thus inserting extremely low temperature deposited TiO_2 to depin the Fermi level for n-Ge may be a better choice.
作者 Yi Zhang Huan Liu Gen-Quan Han Yan Liu Jin-Cheng Zhang Yue Hao 张译;韩根全;刘艳;刘欢;张进成;郝跃(Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第2期116-119,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 61534004,61604112 and 61622405
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