摘要
We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.
１．３μｍｗｉｄｅｂａｎｄｗｉｄｔｈｓｅｍｉｃｏｎｄｕｃｔｏｒｌａｓｅｒｍｏｄｕｌｅＷＡＷＧＰｉｎｈｏｎｇ；ＣＨＩＫａｉｑｉｎｇ（ＣｈｏｎｇｑｉｎｇＯｐｔｏｅｌｅｃｔｒｏｎｉｃｓＲｅｓｅａｒｃｈｉｎｓｔｉｔｕｔｅ，Ｙｏｎｇｃｈｕａｎ６３２１６３，ＣＨ...
