STUDIES OF OXYGEN ADSORPTION AND INITIAL OXIDATION ON SINGLE CRYSTAL Mn_5Si_3(111) SURFACE
STUDIES OF OXYGEN ADSORPTION AND INITIAL OXIDATION ON SINGLE CRYSTAL Mn_5Si-3(111) SURFACE
摘要
Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.
Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.
作者
Ma Maosheng, Ji Mingrong, Wu Jianxin, Liu Xianming Structure Research Lab, University of Science and Technology of China, Academia Sinica, Hefei, Anhui 230026, P. R. China Xu Zhengjia Institute of Semiconductor, Academia Sinica, Beijing 100081, China
出处
《真空科学与技术学报》
EI
CAS
CSCD
1992年第Z1期255-258,共4页
Chinese Journal of Vacuum Science and Technology
