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Thermal Expansion Behavior of Precursor-Derived Amorphous Si-C-N and Si-B-C-N Ceramics 被引量:1

Thermal Expansion Behavior of Precursor-Derived Amorphous Si-C-N and Si-B-C-N Ceramics
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摘要 Thermal expansion behaviors of some precursor-derived amorphous Si-C-N and Si-B-C-N ceramics, which were shaped by plastic forming after crosslink, were studied. To complete the shrinkage and densification, after thermolysis specimens were heat treated at a temperature of 1400℃ for 10 h in nitrogen atmosphere. The thermal expansion coefficient of VT50-derived amorphous Si-C-N ceramic increases from 1.98×10-6/K at 400℃ to 3.09×10-6/K at 1000℃, of NCP200-derived amorphous Si-C-N ceramic increases from 2.35×10-6/K at 400℃ to 3.45×10-6/K at 1000℃, and of T2-l-derived amorphous Si-B-C-N ceramic increases from 2.08×10-6/K at 400℃ to 3.18×10-6/K at 1000℃. No glass transition for these amorphous ceramic materials was detected, indicating that as-thermolyzed precursor-derived Si-(B-)C-N ceramic materials are amorphous solids, but not glasses.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2002年第2期139-142,共4页 材料科学技术(英文版)
关键词 Thermal expansion Amorphous ceramics PRECURSOR S-C-N Si-B-C-N Thermal expansion, Amorphous ceramics, Precursor, S-C-N, Si-B-C-N
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