期刊文献+

高性能金属诱导单向横向晶化多晶硅薄膜晶体管技术和应用 被引量:5

High Performance Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistors: Technology and Applications
下载PDF
导出
摘要 低温金属单向诱导横向晶化多晶硅薄膜晶体管技术与常规的固相晶化多晶硅薄膜晶体管相比 ,制作工艺简单 ,而且提高了场效应迁移率和漏极击穿电压 ,降低了漏电电流 ,改进了器件参数空间分布的均匀性。我们使用金属单向诱导横向晶化多晶硅薄膜晶体管技术 ,成功地制作了有源矩阵液晶显示器和有源矩阵有机发光二极管显示器。 Low temperature metal induced unilaterally crystallized polycrystalline silicon thin film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid crystal and organic light emitting diode flat panel displays.
出处 《液晶与显示》 CAS CSCD 2002年第5期323-330,共8页 Chinese Journal of Liquid Crystals and Displays
关键词 金属单向诱导横向晶化 多晶硅薄膜晶体管 有源平板显示器 有源矩阵液晶显示器 有源矩阵 有机发光二极管 显示器 metal induced laterally crystallization poly Si thin film transistor flat panel displays
  • 引文网络
  • 相关文献

参考文献6

  • 1Jin Z,Bhat G A,Yeung M,et al. Nickel induced crystallization of amorphous silicon thin films[J].Journal of Applied Physics, 1997, 44 (11):958-1964.
  • 2Wong M,Jin Z,Bhat G A,et al. Characterization of the MIC/MILC interface and its effects on the performance of MILC thin film transistors[J].IEEE Transactions on Electron Devices, 2000,47(5):1061-1067.
  • 3Meng Z,Wang M,Wong M.High performance offset metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for sysetm-on-panel applications[J]. IEEE Transactions on Electron Devices,2000,47(2): 404-409.
  • 4Meng Z,Wang M,Kwok H S,et al.Re-crystallized metal-induced laterally crystallized polycrystalline silicon for system-on-panel applications[A].Digest of Technical Papers. 2000 International Symposium of the Society for Information Display[C].2000,380-383.
  • 5Meng Z,Ma T,Wong M.Suppression of leakage current in low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor using an improved process sequence and a gate-modulated lightly-doped drain structure[A]. Technical Digest of the IEEE International Electron Devices Meeting[C]. USA,Washington D. C.,2001, 755-758.
  • 6Meng Z,Li C,Kwok H S,et al.Application of re-crystallized metal-linduced unilaterally crystallized polycrystalline silicon thin-film transistor technology to reflective liquid-crystal display[J]. Journal of the Society for Information Display,2001,9(4):319-323.

同被引文献68

  • 1曾祥斌,孙小卫,李俊峰,齐国钧.电场增强金属诱导侧向晶化制备多晶硅薄膜和薄膜晶体管[J].功能材料,2004,35(z1):1172-1175. 被引量:1
  • 2廖燕平,邵喜斌,吴渊,骆文生,付国柱,荆海,马凯.用金属诱导准分子激光晶化法制备多晶硅薄膜[J].液晶与显示,2005,20(2):128-132. 被引量:4
  • 3蔡捷宏,姚若河,陈明鑫,许佳雄,陈岳政.金属诱导法制备多晶硅薄膜的研究进展[J].轻金属,2006(11):48-50. 被引量:8
  • 4[1]kakkad R, Smith J, Lau W S, et al. Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon[J]. J Appl Phys, 1989, 65(5): 2069-2072.
  • 5[2]Liu G, Fonash S J. Selective area crystallization of amorphous silicon films by low temperature rapid thermal annealing [J].Appl Phys Lett, 1989, 55 (7):660-662.
  • 6[3]Jeon Jae-Hong, Lee Min-Cheol, Park Kee-Chan, et al.New excimer laser recrystallization of poly-Si for effective grain growth and grain boundary arrangement[J].Jpn Soc of Appl Phys., 2000, 39(4B): 2021-2020.
  • 7[4]Christiansen S, Lengsfeld P, Krinde J, et al. Nature of grain boundaries in laser crystallized polycrystalline silicon thin films [ J ]. J Appl Phys, 2001, 89 (10):5438-5354.
  • 8[7]Radnoczi G.Al induced crystallization of a-Si[J].J.Appl.phys.,1991,69(9):6394-6399.
  • 9[10]Heya Akira, lzum Akira, Masuda Atsushi, et al. Control of polycrystalline silicon structure by the two-deposition[J]. Jpn J Appl Phys, 2000, 39: 3888-3895.
  • 10[11]Guo Lihui, Lin Rongming. Studies on the formation of microcrystalline silicon wity PECVD under low and high working pressure[J]. Thin Solid Films, 2000, 376:249-254.

引证文献5

二级引证文献10

;
使用帮助 返回顶部