摘要
By depositing diamond like carbon (DLC) film with radio frequency plasma chemical vapor deposition (RFPCVD) method, a new surface passivation technique for photoluminescence porous silicon (PS) has been studied. The surface microstructure and photoelectric properties of both porous silicon and DLC coated PS have been analyzed by using AFM, FTIR and PL spectrotrieters. The results show the DLC film with dense and homogenous nanometer grains can be deposited on the PS used as passivation coating as it can terminate oxide reaction on the surface of the PS. Furthermore, certain ratio of hydrogen existed in the DLC film can be improved to form hydride species on the DLC/PS interface as the centers of the luminescence so that the DLC coating is of benefit not only to the passivation of the PS but also to the improvement of its luminescent intensity.
By depositing diamond like carbon (DLC) film with radio frequency plasma chemical vapor deposition (RFPCVD) method, a new surface passivation technique for photoluminescence porous silicon (PS) has been studied. The surface microstructure and photoelectric properties of both porous silicon and DLC coated PS have been analyzed by using AFM, FTIR and PL spectrotrieters. The results show the DLC film with dense and homogenous nanometer grains can be deposited on the PS used as passivation coating as it can terminate oxide reaction on the surface of the PS. Furthermore, certain ratio of hydrogen existed in the DLC film can be improved to form hydride species on the DLC/PS interface as the centers of the luminescence so that the DLC coating is of benefit not only to the passivation of the PS but also to the improvement of its luminescent intensity.
基金
Shanghai Education Commission!(No. 97 QE33 )
