全息光刻制备808 nm腔面光栅半导体激光器

808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography

利用全息光刻开展了808 nm腔面光栅半导体激光器腔面膜系制备,制备与表征了单管芯器件,单管芯器件条宽100μm,腔长2 mm,输出中心波长807.32 nm,光谱半宽为0.36 nm,15~45℃温度范围内波长随温度的漂移系数为0.072 nm/℃,室温单管芯最大连续输出功率达到2.8 W,阈值电流为0.49 A,斜率效率为1.05 W/A。测试结果表明808 nm腔面光栅半导体激光器实现了单纵模输出。

The laser holography photolithography technology was designed, the optical path of holography lithography system was calculated and built based on the designed parameters of cavity grating, and the holography lithography conditions were optimized to fabricate the mask patterns of cavity grating. Based on the design of facet coating films, the facet coating process was investigated by precisely controlling the thickness and uniformity of films to realize the transmissivity, reflectivity, and bandwidth satisfied with the single longitudinal mode output of 808 nm facet grating LD. The single chip device of 808 nm facet grating LD was fabricated and characterized, with width of 100 μm and length of 2 mm. High performance was achieved with central wavelength of 807.32 nm, FWHM of 0.36 nm, wavelength drift coefficient with temperature variation(15~45 ℃) of 0.072 nm/℃, maximum output power of 2.8 W, threshold of 0.49 A, and slop efficient of 1.05 W/A.