摘要
This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly.This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode.Static characterization and switching behavior analysis of proposed structure are conducted in this paper.The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors.The real time internal voltage and current value during switching transition are deduced with the equivalent circuit.To validate the analysis,two voltage specification rectifiers are built.Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.
This paper presents a cascode configuration synchronous rectifier device based on silicon MOSFET and Schottky diode,which can replace traditional power diode directly. This structure has self-driven ability with simple external circuit,and the conduction characteristic is preferable to a power diode. Static characterization and switching behavior analysis of proposed structure are conducted in this paper. The switching process is illustrated in detail using real model which considers the parasitic inductances and the nonlinearity of junction capacitors. The real time internal voltage and current value during switching transition are deduced with the equivalent circuit. To validate the analysis,two voltage specification rectifiers are built. Finally,double-pulse test results and the practical design example verify the performance advantages of proposed structure.
基金
supported in part by the National Natural Science Foundation of China (No.51777093)
